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| 2SC1906 Silicon NPN Epitaxial Planar Application * VHF amplifier * Mixer, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1906 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 19 2 50 -50 300 150 -55 to +150 Unit V V V mA mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 19 2 -- 40 600 -- -- -- -- -- Typ -- -- -- -- -- 1000 1.0 0.2 10 33 18 Max -- -- -- 0.5 -- -- 2.0 1.0 25 -- -- MHz pF V ps dB dB Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 3 mA, RBE = I E = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz I C = 20 mA, IB = 4 mA VCB = 10 V, IC = 10 mA, f = 31.8 MHz VCE = 10 V, I C = 5 mA VCE = 10 V, I C = 5 mA f = 45 MHz f = 200 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance Collector to emitter saturation voltage Base time constant Power gain V(BR)EBO I CBO hFE fT Cob VCE(sat) rbb' PG * CC 2 2SC1906 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 Collector Current IC (mA) Typical Output Characteristics 20 PC 180 = 160 140 0 30 16 m W 200 120 12 100 8 80 60 100 4 40 IB = 20 A 0 100 150 50 Ambient Temperature Ta (C) 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 20 DC Current Transfer Ratio hFE Collector Current IC (mA) VCE = 10 V 120 100 80 60 40 20 0 0.1 0.2 DC Current Transfer Ratio vs. Collector Current 16 VCE = 10 V 12 8 4 0 0.2 0.4 0.6 0.8 1.0 0.5 1.0 2 5 10 20 50 100 Base to Emitter Voltage VBE (V) Collector Current IC (mA) 3 2SC1906 Gain Bandwidth Product Curve 20 1,200 Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (MHz) 700 800 Collector Current IC (mA) 90 16 12 fT ,0 =1 00 z MH 1,000 800 600 400 200 0 0.1 VCE = 10 V f = 100 MHz 8 4 600 500 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) 0 0.3 1.0 3 10 30 100 Collector Current IC (mA) Base Time Constant vs. Collector Currnt 200 Base time Constant rbb'*CC (ps) Input Suceptance bie (mS) 100 50 VCB = 10 V f = 31.8 MHz 12 10 8 6 4 2 Input Admittance vs. Frequency 2 mA 4 mA 8 mA 12 mA IC = 1 mA 250 200 20 10 5 100 50 f = 25 MHz yie = gie+jbie VCE = 9 V 2 0.1 0.2 0.5 1.0 2 5 10 0 Collector Current IC (mA) 10 2 4 6 8 Input Conductance gie (mS) 12 4 2SC1906 Output Admittance vs. Frequency Reverse Transfer Suceptance bre (mS) 6 Output Suceptance boe (mS) 5 4 3 2 100 1 50 f = 25 MHz 0 1.0 0.2 0.4 0.6 0.8 Output Conductance goe (mS) 1.2 IC = 1 mA 2 4 8 200 0 yre = gre+jbre VCE = 9 V Reverse Transfer Admittance vs. Frequency f = 25 MHz 50 100 12 250 -0.4 -0.8 200 250 IC = 21 mA 8 -1.2 yoe = goe+jboe VCE = 9 V 4 2 1 -1.6 -2.0 -0.10 -0.08 -0.06 -0.04 -0.02 0 Reverse Transfer Conductance gre (mS) Forward Transfer Admittance vs. Frequency Forward Transfer Suceptance bfe (mS) 20 0 -20 -40 -60 25f = -80 -100 -120 0 20 40 60 80 100 120 140 Forward Transfer Conductance gfe (mS) 17 IC = 1 mA 2 Conversion Gain CG (dB) yfe = gfe+jbfe VCE = 9 V 4 16 15 14 13 12 11 10 0 Conversion Gain vs. Local Oscillating Injection Voltage MH z2 00 8 VCB = 9 V IE = 3.5 mA fs = 200 MHz fosc = 245 MHz fIF = 45 MHz Emitter Inject 15 0 100 80 50 12 25 0.3 0.1 0.2 Injection Voltage Vinj (V) 5 2SC1906 Conversion Gain vs. Emitter Current 18 Conversion Gain CG (dB) 16 14 12 10 8 6 4 0 -1 -2 -3 -4 -5 -6 Emitter Current IE (mA) -7 VCB = 9 V Vinj = 150 mV fs = 200 MHz fosc = 245 MHz fIF = 45 MHz Emitter Inject 6 Unit: mm 4.8 0.3 3.8 0.3 2.3 Max 0.45 0.1 0.7 0.60 Max 12.7 Min 5.0 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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